Sample |
Time (hours) |
Temperature (°C) |
pH |
Concentration (mM) |
A |
6 |
200 |
7 |
20 |
B |
9 |
200 |
7 |
20 |
C |
12 |
200 |
7 |
20 |
D |
24 |
200 |
7 |
20 |
E |
24 |
150 |
7 |
20 |
F |
24 |
200 |
7 |
20 |
G |
24 |
200 |
4 |
20 |
H |
24 |
200 |
7 |
20 |
I |
24 |
200 |
10 |
20 |
J |
24 |
200 |
7 |
20 |
K |
24 |
200 |
7 |
200 |
Table1 Reaction conditions for TiO2/LaAlO3 thin film deposition.
Figure 1 XRD patterns of TiO2 thin film on LAO substrate. (a) θ-2θ scan; (b) -scans of TiO2 (101) and LAO (101).
Figure 2 Cross-section TEM images of TiO2 thin film deposited on (001) LAO substrate.
Figure 3 SEM image of anatase TiO2 thin film on LAO substrate.
Figure 4 Ramus angle (angle between the FH plane and the ramus plane)
XRD patterns of TiO2/LAO in different reaction conditions shown in Table 1.
Figure 5 Gonial angle (angle between mandibular plane and ramus plane)
AFM images of TiO2 thin film on LAO substrate. (a) without SiO2 embedded; (b) with SiO2 embedded.
Figure 6 Cycle performance of pure and SiO2-embedded TiO2 at a current density of 100mA/g.