Table 1

Sample	Peak (hkl)	2θ	d_exp_. (Å)	N, (m^-2 ) x10¹⁷	Structure
InSe InSe:Cu	(002)	11.200 11.202	7.905 7.900	3,127 2,884	Hexagonal
InSe InSe:Cu	(004)	21.920 21.923	4.062 4.060	2,443 1,099
InSe InSe:Cu	(006)	32.950 32.952	2.715 2.710	1,808 1,046
InSe InSe:Cu	(008)	44.080 44.084	2.053 2.052	1,191 1,055
InSe InSe:Cu	(0012)	68.070 68.072	1.377 1.376	2,177 2,463
InSe InSe:Cu	(0014)	81.420 81.425	1.183 1.182	2,308 3,776

Table 1: Standard and some calculated XRD results of InSe and InSe:Cu semiconductor

Table 2

Sample	Peak (hkl)	2θ	D, (nm)	e, (lin-2m4 )x10-4	d, (lin/m2 ) x1015
InSe InSe:Cu	(002)	11.200 11.202	48,14 56,86	7,29 5,71	0,51 0,30
InSe InSe:Cu	(004)	21.920 21.923	58,11 76,87	6,27 4,70	0,42 0,21
InSe InSe:Cu	(006)	32.950 32.952	64,26 78,16	5,65 4,62	0,34 0,18
InSe InSe:Cu	(008)	44.080 44.084	73,84 77,93	4,95 4,69	0,23 0,17
InSe InSe:Cu	(0012)	68.070 68.072	60,40 58,78	5,99 6,165	0,36 0,34
InSe InSe:Cu	(0014)	81.420 81.425	59,35 50,95	6,12 7,13	0,40 0,55

Table 2: The crystallite size (D), dislocation density () and residual strain () for the undoped InSe and InSe:Cu

Tables at a glance

Table 1

Table 2

Figures at a glance

Comments

Figure 1

Comments

Figure 2

Comments

Figure 3

Comments

Figure 4

FIGURE 1

Figures 1a and b: XRD spectra of InSe and InSe:Cu binary compound are given at room temperature. Miller indices are shown at each diffraction peak

FIGURE 2

Figure 2: The effect of doping the Cu element on the InSe semiconductor on the peak intensity

FIGURE 3

Figure 3: SEM images taken at 15 kV with a 25.000 magnification for (a) InSe and (b) InSe:Cu crystals

FIGURE 4

Figures 4a and b: EDX data of a) InSe and b) InSe:Cu crystal grown at room temperature