EDITORIAL-DETAILS (JMSA)
Hock Jin QUAH
Associate Professor
Institute of Nano Optoelectronics Research and Technology
Universiti Sains Malaysia
Malaysia
Biography
Dr. Quah Hock Jin has been working as a senior lecturer at the Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia (USM) since December 2018. He received his BEng (Hons) in Materials Engineering from School of Materials and Mineral Resources Engineering (SMMRE), USM in 2008. He graduated with PhD (2014) and MSc (2010) in Electronics Materials from SMMRE, USM under the sponsorship of “The USM Vice Chancellor’s Award 2011” and “USM Fellowship”, respectively. Immediately after graduation, he worked as post-doctoral fellow at INOR, USM and Institute of Advanced Technology (ITMA), Universiti Putra Malaysia. After completing his tenure as post-doctoral fellow, he continued his career as a metal-organic chemical vapor deposition (MOCVD) engineer in Collaborative Research in Engineering, Science, & Technology (CREST), with the responsibility of managing and controlling the MOCVD system located at INOR, USM for the “GaN on GaN” national project. His research focuses in the development of thin film technology and optimization of device performance based on high dielectric constant thin film materials as well as wide band gap semiconductors for potential applications in power electronics, solid-state lighting, gas sensors, and photodetectors. For years, he has actively involved in the growth of binary and ternary based thin film materials as the passivation layers for GaN-, SiC-, Si-, and Ge-based metal-oxide-semiconductor (MOS) capacitors. In recent times, his research areas are widened to the growth and modification of Ga2O3- and GaN-based compound semiconductors using low-cost route to study the aspects of optical performance and gas sensing behaviours. His contribution in the field of research and development is reflected through 95 international refereed top-tier publications with H-Index of 19 and 1 patent granted under MyIPO. He has also received several recognitions from the university under “Sanggar Sanjung” awards for year 2008, 2010 to 2016, and 2018 to 2023 as well as the “Best Thesis Award for Category of CRI: Engineering and Technology” for the year 2014. In Year 2024, he was awarded by the Ministry of Science and Technology of the People’s Republic of China with the “2024 Talented Young Scientist Program (TYSP)” award. He is presently the Editorial Board Member for International Journal of Energy Research (JCR Impact Factor: 4.3, Quartile: Q1)”, Microelectronics International (JCR Impact Factor: 0.7, Quartile: Q4), and Associate Editor for Frontier in Materials (JCR Impact factor: 2.6; Quartile: Q3). Besides, he is also the Editorial Board Member for Journal of Modern Nanotechnology, Stechnolock: Nanotechnology and Nanomedicine, Current Chinese Science, and Advances in Nanoscience and Nanotechnology. His research experience and contribution in his subject matters of expertise have led to invitations to review more than 200 manuscripts from different journals as well as to edit 25 books and special journal issues.
Research Interest
Electronic Materials, Wide Band Gap Semiconductors, High Dielectric Constant Binary and Ternary Gate Oxide, Si-, SiC- and GaN-based Metal-Oxide-Semiconductor (MOS) Devices
