EDITORIAL-DETAILS (JNSM)
Israel Mejia
Research Scientist
University of Texas at Dallas
USA
Biography
Dr. Mejia was born in Mexico City, Mexico in 1981. He received his undergraduate degree in Electrical Engineering from the “National Polytechnique Institute” in Mexico City in 2003 with distinctions. He received his Masters and Ph. D Science degrees from CINVESTAV-‐Mexico City in 2006 and 2010, respectively. During his Ph. Dr. Mejia worked with the modeling, simulation and fabrication of thin film transistors (TFTs) using organic materials and a-‐Si:H. In 2010, he joined The University of Texas at Dallas (UT Dallas) as a Research Scientist. He has published more than 35 papers in peer-‐reviewed journals and conference proceedings, and holds two U. S. pending patents. He has been leading the design and analysis of novel semiconductor devices to integrate four main projects at UT Dallas: novel device integration schemes, DRAM 1T1C technology, pixel arrays for large area charged particle and neutron sensors, thin film transistors (TFTs) technology and energy harvesting.
Research Interest
Design, fabrication and characterization of novel electronic devices using alternative materials to silicon towards their implementation in low-‐cost, flexible and large area electronics applications. In particular, the study of novel organic/inorganic semiconductors for their use in diodes, solar cells, sensors, thin film transistor (TFT) and complementary transistor (CMOS) circuits. Also, the modeling and simulation of semiconductor devices using electronic design automation (EDA) and technology computer aided design (TCAD) tools such as ATLAS, ATHENA, SPICE, etc.
